Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
نویسندگان
چکیده
منابع مشابه
High phosphorous doped germanium: Dopant diffusion and modeling
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 Â 10 19 cm À3 by the ph...
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We report studies defining the diameter-dependent location of electrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster catalyzed vapor-liquid-solid (VLS) growth without measurable competing homogeneous decomposition and surface overcoating. The location of active dopants was assessed from electrical transport measurements before and after removal of...
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Manganese diffusion in monocrystalline germanium A. Portavoce,a,b,⇑ O. Abbes, Y. Rudzevich, L. Chow, V. Le Thanh and C. Girardeaux CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France Aix-Marseille Université, IM2NP, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France CNRS, CINAM, Campus de Luminy Case 913, 13288 Marseille, France Department of ...
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Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...
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The formation and thermal stability of nickel germanide on germanium substrate were examined by both electrical and physical characterization methods. Low resistivity (14 m cm) mono-nickel–germanide was formed at a low temperature of 400 C on Ge substrate. The sheet resistance of nickel germanide changed with the germanide formation temperatures and had a similar characteristic as nickel silici...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2009
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3086664